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GT30J121

Features: • Fourth-generation IGBT• Enhancement mode type• Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.)• Low saturation voltage: VCE (sat) = 2.0 V (typ.)Spe...

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SeekIC No. : 004357026 Detail

GT30J121: Features: • Fourth-generation IGBT• Enhancement mode type• Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss : Eon...

GT30J121 Data Sheet

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Part Number:
GT30J121
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)


Specifications

SYMBOL PARAMETER RATING UNIT
VCES Collector-emitter voltage 600 V
VGES Gate-emitter voltage ±20 V
IC Collector current DC 30 A
ICP Collector current1 ms 60 A
PC Collector dissipationTC = 25 170
W
Tj Junction temperature 150
Tstg Storage temperaturerange -55 to +150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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