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GT30J122

Application• Enhancement mode type• High speed: tf = 0.25s (Typ.) (IC = 50A)• Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)Specifications Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES...

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GT30J122: Application• Enhancement mode type• High speed: tf = 0.25s (Typ.) (IC = 50A)• Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)Specifications Characteristics Symbo...

GT30J122 Data Sheet

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Part Number:
GT30J122
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Application

• Enhancement mode type
• High speed: tf = 0.25s (Typ.) (IC = 50A)
• Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)


Specifications

Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
± 20
V
Collector current DC
1 ms
IC
ICP
30
100
A
Collector power dissipation
(Tc = 25)
PC
75
W
Junction temperature
Tj
150
Storage temperature range
Tstg
 -55~150


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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