Purchase GT30J324, In-stock GT30J324 From SeekIC.
MFG:TOHSIBA Package Cooled:TO-
- Table of contents:
GT30J324
-
Suppliers
DataSheet
General Description
GT30J324 Maximum Ratings
|
Characteristics |
Symbol |
Rating |
Unit | |
| Collector-emitter voltage |
VCES |
600 |
V | |
| Gate-emitter voltage |
VEBS |
±20 |
V | |
| Collector current |
DC |
IC |
30 |
A |
|
1 ms |
ICP |
60 | ||
| Emitter-collector forward current |
DC |
IF |
30 |
A |
|
1 ms |
IFP |
60 | ||
| Collector power dissipation (Tc = 25) |
PC |
170 |
W | |
| Junction temperature |
Tj |
150 |
||
| Storage temperature range |
Tstg |
-55 to 150 |
||
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
GT30J324 Features
• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)High speed: tf = 0.05 s (typ.)Low switching loss : Eon = 1.00 mJ (typ.): Eoff = 0.80 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)High speed: tf = 0.05 s (typ.)Low switching loss : Eon = 1.00 mJ (typ.): Eoff = 0.80 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector
GT30J324 Connection Diagram
GT30J324
PDF/DataSheet Download
- Datasheet: GT30J324
- File Size: 170331 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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