Position: Home > Datasheet list > GT6 Series > Index G > GT6301K
Electronica China

Purchase GT6301K, In-stock GT6301K From SeekIC.

 

GT6301K Product Image

GT6 Series Datasheet download

Five Points

Part Number: GT6301K

 

 

 

 

Description: The GT6301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extr...


Urgent Purchase

GT6301K General Description


The GT6301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The GT6301K is universally used for all commercial-industrial applications.

GT6301K Maximum Ratings

Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±16 V
Continuous Drain Current3, VGS@10V ID @TA=25 640 A
Continuous Drain Current3, VGS@10V ID @TA=70 500 A
Pulsed Drain Current1,2 IDM 950 A
Total Power Dissipation PD @TA=25 1.2 W
Linear Derating Factor   0.01 W/
Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150

GT6301K Features

*Simple Drive Requirement
*Small Package Outline
*RoHS Compliant

GT6301K datasheet

GT605
PDF/DataSheet Download

  • Datasheet: GT605
  • File Size: 73488 KB
  • Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]
  • Click here to Download

Find GT6301K Suppliers

  • ·GT60J321
  • TOSHIBA [Toshiba Semiconductor] 
  • The 4th Generation Soft Switching Applications 
  • 188247 KB
  • GT60J321 Datasheet Download
  • ·GT60J322
  • TOSHIBA [Toshiba Semiconductor] 
  • The 4th Generation Soft Switching Applications 
  • 284087 KB
  • GT60J322 Datasheet Download
  • ·GT60M104
  • TOSHIBA [Toshiba Semiconductor] 
  • N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) 
  • 259121 KB
  • GT60M104 Datasheet Download
  • ·GT60M301
  • TOSHIBA [Toshiba Semiconductor] 
  • N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS) 
  • 299471 KB
  • GT60M301 Datasheet Download
  • ·GT60M302
  • TOSHIBA [Toshiba Semiconductor] 
  • N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS) 
  • 282598 KB
  • GT60M302 Datasheet Download
  • ·GT60M303
  • TOSHIBA [Toshiba Semiconductor] 
  • N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS) 
  • 287024 KB
  • GT60M303 Datasheet Download
  • ·GT60M322
  • TOSHIBA [Toshiba Semiconductor] 
  • TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 
  • 195747 KB
  • GT60M322 Datasheet Download
  • ·GT60M323
  • TOSHIBA [Toshiba Semiconductor] 
  • TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 
  • 197671 KB
  • GT60M323 Datasheet Download

GT6301K Relative Products

Hotspot Suppliers Product

  • Models: ICL8048CCJE
Price: 35-45 USD

    ICL8048CCJE

    Price: 35-45 USD

    monolithic logarithmic amplifier; IIN 2mA; IREF 2mA;

  • Models: CX28250-26
Price: 10-12 USD

    CX28250-26

    Price: 10-12 USD

    ATM-SONET Physical Layer (PHY), –0.5 to +4.6V, PLL clock and data recovery (CDR) circuit, 156 pin ...

  • Models: 1AB09315AAAA
Price: 2.8-6.5 USD

    1AB09315AAAA

    Price: 2.8-6.5 USD

    1AB09315AAAA, PLCC, Alcatel-Lucent Enterprise

  • Models: Z0292212VSGR3910
Price: 1.9-2.8 USD

    Z0292212VSGR3910

    Price: 1.9-2.8 USD

    single-chip modem solution, PLCC, -0.3 to +7.0 V, analog front-end

  • Models: AD9832BRUZ
Price: 3.5-4 USD

    AD9832BRUZ

    Price: 3.5-4 USD

    CMOS Complete DDS, 16TSSOP, Serial Loading, Power-Down Option, 45 mW Power Consumption

  • Models: SAB-C517A-LN
Price: 12.42-15 USD

    SAB-C517A-LN

    Price: 12.42-15 USD

    8-bit, CMOS microcontroller, –10 to 10 mA, PLCC84, –0.5 to 6.5 V

  • Models: 2DI75M-120
Price: 40-45 USD

    2DI75M-120

    Price: 40-45 USD

    power transistor module, high DC current gain, including free wheeling diode, insulated type, 75A

  • Models: E39-R1S
Price: 6-10 USD

    E39-R1S

    Price: 6-10 USD

    Photoelectric Sensor, OMRON Corporation, E39-R1S, 20 MΩ, 1000 VAC

  • Models: W77E516A40PL
Price: 0.1-5 USD

    W77E516A40PL

    Price: 0.1-5 USD

    fast 8051 compatible microcontroller, PLCC, 8-BIT, 64K, 4.5V to 5.5V, High speed

  • Models: BUF03FJ
Price: 3.5-7 USD

    BUF03FJ

    Price: 3.5-7 USD

    monolithic voltage follower, CAN8, ±18V, 8 pin TO-99

  • Models: AQV210EH
Price: 0.1-100 USD

    AQV210EH

    Price: 0.1-100 USD

    Optoelectronics device, photoMOS relay, 130MA, 6-DIP, Through Hole, 6-DIP (0.300", 7.62mm)

  • Models: BLW60C
Price: 18-20 USD

    BLW60C

    Price: 18-20 USD

    NPN SILICON RF POWER TRANSISTOR BLW60C Philips

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All