GT8G133

Application

• Compact and Thin (TSSOP-8) package
• Enhancement-mode
• 4-V gate drive voltage: V_GE = 4.0 V (min) (@I_C = 150 A)
• Peak collector current: I_C = 150 A (max)


Specifications

Characteristic		Symbol	Rating	Unit
Collector-emitter voltage		VCES	400	V
Gate-emitter voltage	DC	VGES	± 6	V
	Pulse	VGES	± 6
Collector current	Pulse (Note1)	ICP	150	A
Collector power dissipation(t=10 s)	(Note 2a)	PC (1)	1.1	W
	(Note 2b)	PC (2)	0.6	W
Junction temperature		Tj	150
Storage Temperature range		Tstg	-55~150

Note: Using continuously under heavy loads (e.g. theapplication of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate,etc).