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Part Number: GT8G134

 

 

 

 

 

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GT8G134 Maximum Ratings

Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
400
V
Gate-emitter voltage DC
VGES
± 4
V
Pulse
VGES
± 5
Collector current Pulse
(Note 1)
ICP
150
A
Collector power
dissipation(t=10 s)
Note 2a)
PC (1)
1.1
W
Note 2b)
P C(2)
0.6
W
Junction temperature
Tj
150
Storage temperature range
Tstg
−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

GT8G134 Typical Application

• Compact and Thin (TSSOP-8) package
• Enhancement-mode
• Peak collector current: IC = 150 A (max) (@VGE=2.5V(min))/

GT8G134 Connection Diagram

GT8G134  Connection Diagram

GT8G134 datasheet

GT80J101
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