Purchase GT8G134, In-stock GT8G134 From SeekIC.

| Characteristics |
Symbol |
Rating |
Unit | |
| Collector-emitter voltage |
VCES |
400 |
V | |
| Gate-emitter voltage | DC |
VGES |
± 4 |
V |
| Pulse |
VGES |
± 5 | ||
| Collector current | Pulse (Note 1) |
ICP |
150 |
A |
| Collector power dissipation(t=10 s) |
Note 2a) |
PC (1) |
1.1 |
W |
| Note 2b) |
P C(2) |
0.6 |
W | |
| Junction temperature |
Tj |
150 |
||
| Storage temperature range |
Tstg |
−55~150 | ||
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
GT80J101
PDF/DataSheet Download








