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Part Number: GTC220E

 

 

 

 

Description: The GTC220E provides the designer with the best combination of fast switching, ruggedized device desig...


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GTC220E General Description


The GTC220E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

GTC220E Maximum Ratings

Symbol Parameter Ratings Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ±12 V
ID @ Ta = 25 Continuous Drain Current3, VGS @ -10V 5.0 A
ID @ Ta = 70 Continuous Drain Current3, VGS @ -10V 4.0 A
IDM Pulsed Drain Current1,2 20 A
PD @ Ta = 25 Total Power Dissipation 1 W
  Linear Derating Factor 0.008 mW/
TJ, TSTG Junction and Storage Temperature Range -55 ~ +150

GTC220E Features

·Low on-resistance
·Capable of 2.5V gate drive
·Low drive current
·Surface mount package

GTC220E datasheet


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