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GTS217E

Features: ·Low on-resistance·Capable of 2.5V gate drive·Optimal DC/DC battery applicationSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current3 ID @TA=25􀐺 7 A Continuous Drain Current3...

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SeekIC No. : 004357130 Detail

GTS217E: Features: ·Low on-resistance·Capable of 2.5V gate drive·Optimal DC/DC battery applicationSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Volta...

GTS217E Data Sheet

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Part Number:
GTS217E
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Low on-resistance
·Capable of 2.5V gate drive
·Optimal DC/DC battery application


Specifications

Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current3 ID @TA=25􀐺 7 A
Continuous Drain Current3 ID @TA=70􀐺 5.7 A
Pulsed Drain Current1 IDM 30 A
Total Power Dissipation PD @TA=25􀐺 1.5 W
Linear Derating Factor   0.012 W/􀐺
Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150  



Description

The GTS217E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.




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