Purchase GVD20435, In-stock GVD20435 From SeekIC.
- Table of contents:
GVD20435
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Suppliers
DataSheet
General Description
GVD20435 Features
• Mesa epitaxial silicon construction
• Silicon dioxide passivated
• Superior mid range linear characteristics
• High tuning ratios
• High Q
• Available in common cathode style
• Available in chip form (add suffix -000)
• Silicon dioxide passivated
• Superior mid range linear characteristics
• High tuning ratios
• High Q
• Available in common cathode style
• Available in chip form (add suffix -000)
GVD20435 Typical Application
• TCXOs, VCXOs
• Low voltage wireless open loop VCOs
• Low voltage wireless phase locked loop VCOs
• Phase shifters
• Low voltage wireless open loop VCOs
• Low voltage wireless phase locked loop VCOs
• Phase shifters
- Datasheet:
- File Size: KB
- Manufacturer:
- Click here to Download
- · EPCS4SI8
- 226669 KB
- · UTC2411
- 136508 KB
- ·(M5M410092B)
- Mitsubishi
- 3D-RAM
- 1268750 KB
- ·_FCQ30A06
- NIEC [Nihon Inter Electronics Corporation]
- LOW FORWARD VOLTAGE DROP
- 29515 KB
- ·0001.2501.PT
- Fuse
- 40400 KB
- ·0001.2501.TR
- Fuse
- 40400 KB
- ·0001.2502.PT
- Fuse
- 40400 KB
- ·0001.2502.TR
- Fuse
- 40400 KB
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GVD20434
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