GWM120-0075P3

Input Capacitance (Ciss) @ Vds: -
Mounting Type: Surface Mount
Series: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Power - Max: -
Vgs(th) (Max) @ Id: 4V @ 1mA
Packaging: Tube
Manufacturer: IXYS
FET Type: 6 N-Channel (3-Phase Bridge)
Package / Case: ISOPLUS-DIL?
Supplier Device Package: ISOPLUS-DIL?
Current - Continuous Drain (Id) @ 25° C: 118A
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V
Gate Charge (Qg) @ Vgs: 100nC @ 10V


Features:

• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability
- auxiliary terminals for MOSFET control
- terminals for soldering or welding connections
- isolated DCB ceramic base plate with optimized heat transfer


Application

AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment


Specifications

Symbol	Conditions	Maximum Ratings
VDSS	TVJ = 25°C to 150	75	V
VGS		±20	V
ID25 ID90	TC = 25 TC = 90	125 95	A A
IF25 IF90	TC = 25 (diode) TC = 90 (diode)	130 85	A A