Purchase GWM120-0075P3, In-stock GWM120-0075P3 From SeekIC.
MFG:IXYS
- Table of contents:
GWM120-0075P3
-
Suppliers
DataSheet
General Description
GWM120-0075P3 Maximum Ratings
| Symbol | Conditions | Maximum Ratings | |
| VDSS | TVJ = 25°C to 150 |
75 |
V |
| VGS |
±20 |
V | |
| ID25 ID90 |
TC = 25 TC = 90 |
125 95 |
A A |
| IF25 IF90 |
TC = 25 (diode) TC = 90 (diode) |
130 85 |
A A |
GWM120-0075P3 Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability
- auxiliary terminals for MOSFET control
- terminals for soldering or welding connections
- isolated DCB ceramic base plate with optimized heat transfer
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability
- auxiliary terminals for MOSFET control
- terminals for soldering or welding connections
- isolated DCB ceramic base plate with optimized heat transfer
GWM120-0075P3 Typical Application
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
GWM160-0055P3
PDF/DataSheet Download
- Datasheet: GWM160-0055P3
- File Size: 81394 KB
- Manufacturer: IXYS [IXYS Corporation]
- Click here to Download
- ·GWM220-004P3
- IXYS [IXYS Corporation]
- Three phase full bridge with Trench MOSFETs in DCB isolated high current package
- 57667 KB
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