Features: • Higher Current Rating• Lower RDS(on)• Lower Capacitances• Lower Total Gate Charge• Tighter VSD Specifications• Avalanche Energy SpecifiedSpecifications Symbol Parameter VALUE Unit ID Drain to Current (Continuous) 4 A IDM Drain to Cu...
H04N60: Features: • Higher Current Rating• Lower RDS(on)• Lower Capacitances• Lower Total Gate Charge• Tighter VSD Specifications• Avalanche Energy SpecifiedSpecification...
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Symbol | Parameter | VALUE | Unit |
ID | Drain to Current (Continuous) | 4 | A |
IDM | Drain to Current (Pulsed) | 16 | A |
VGS | Gate-to-Source Voltage (Continue) | ±30 | V |
PD | Total Power Dissipation (TC=25) H03N60E (TO-220AB) H03N60F (TO-220FP) |
70 30 |
W |
Derate above 25 H03N60E (TO-220AB) H03N60F (TO-220FP) |
0.56 0.2 |
W/ | |
Tj, TSTG | Operating and Storage Temperature Range | -55 to 150 | |
EAS | Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25 (VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25) |
250 | mJ |
TL | Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds |
260 |
This advanced high voltage MOSFET H04N60 is designed to withstand high energy in the avalanche mode and switch efficiently. H04N60 also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.