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H08N02CTS

Features: • RDS(on)<30m@VGS=2.5V, ID=5.5A• RDS(on)<20m@VGS=4.5V, ID=6.5A• High Density Cell Design for Ultra Low On-Resistance• High Power and Current Handing Capability• Fully Characterized Avalanche Voltage and Current• Ideal for Li ion Battery Pack Appl...

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SeekIC No. : 004357393 Detail

H08N02CTS: Features: • RDS(on)<30m@VGS=2.5V, ID=5.5A• RDS(on)<20m@VGS=4.5V, ID=6.5A• High Density Cell Design for Ultra Low On-Resistance• High Power and Current Handing Capabilit...

H08N02CTS Data Sheet

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Part Number:
H08N02CTS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• RDS(on)<30m@VGS=2.5V, ID=5.5A
• RDS(on)<20m@VGS=4.5V, ID=6.5A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications


Specifications

Symbol Parameter Value Unit
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ±12 V
ID Drain Current (Continuous 8 A
IDM Drain Current (Pulsed) *1 30 A
PD Total Power Dissipation @TA=25oC 1.5 W
Total Power Dissipation @TA=75oC 0.96 W
Tj, Tstg Operating and Storage Temperature Range -55 to +150 °C
RJA Thermal Resistance Junction to Ambient (PCB mounted)*2 83 °C/W
*1: Maximum DC current limited by the package under the ambient condition at room temperature.
*2: 1-in2 2oz Cu PCB board


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