H11B815 General Description
The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package.
H11B815 Features
• Compact 4-pin package
• Current Transfer Ratio: 600% minimum (at IF= 1 mA)
• High isolation voltage between input and output (5300 VRMS)
• UL recognized (File # E90700
H11B815 Typical Application
• Power Supply Monitors
• Relay Contact Monitor
• Telephone/Telegraph Line Receiver
• Twisted Pair Line Receiver
• Digital Logic/Digital Logic
H11B815 Connection Diagram
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