H11B815

Isolation Voltage : 5000 Vrms
Minimum Operating Temperature : - 55 C
Maximum Forward Diode Voltage : 1.5 V
Maximum Operating Temperature : + 100 C
Maximum Power Dissipation : 250 mW
Packaging : Bulk
Input Type : DC
Package / Case : PDIP-4
Maximum Collector Emitter Saturation Voltage : 1 V
Maximum Collector Emitter Voltage : 35 V
Maximum Collector Current : 80 mA
Current Transfer Ratio : 7500 %


Features:

• Compact 4-pin package
• Current Transfer Ratio: 600% minimum (at IF= 1 mA)
• High isolation voltage between input and output (5300 VRMS)
• UL recognized (File # E90700


Application

• Power Supply Monitors
• Relay Contact Monitor
• Telephone/Telegraph Line Receiver
• Twisted Pair Line Receiver
• Digital Logic/Digital Logic


Pinout




Specifications

Parameter	Symbol	Value	Units
TOTAL DEVICE Storage Temperature	TSTG	-55 to +150	°C
Operating Temperature	TOPR	-55 to +100	°C
Lead Solder Temperature	TSOL	260 for 10 sec	°C
Total Device Power Dissipation @ TA = 25°C	PD	250	mW
EMITTER DC/Average Forward Input Current	IF	80	mA
Reverse Input Voltage	VR	6	V
Forward Current - Peak (1s pulse, 300pps) I	LF(PK)	1	A
LED Power Dissipation @ TA = 25°C	PD	140	mW
Derate above 25°C		1.33	mW/°C
DETECTOR Collector-Emitter Voltage	VCEO	35	V
Emitter-Collector Voltage	VECO	6	V
Continuous Collector Current	LC	200	mA
Detector Power Dissipation @ TA = 25°C	PD	200	mW
Derate above 25°C		2.0	mW/°C

Description

The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package.