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MFG:FATRCHIL  Package Cooled:DIP/SMD  D/C:02+  

H11B815 Product Image

H11 Series Datasheet download

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Part Number: H11B815

 

MFG: FATRCHIL

Package Cooled: DIP/SMD

D/C: 02+

Description: The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-...


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H11B815 General Description


The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package.

H11B815 Maximum Ratings

Parameter Symbol Value Units
TOTAL DEVICE
Storage Temperature
TSTG -55 to +150 °C
Operating Temperature TOPR -55 to +100 °C
Lead Solder Temperature TSOL 260 for 10 sec °C
Total Device Power Dissipation @ TA
= 25°C
PD 250 mW
EMITTER
DC/Average Forward Input Current
IF 80 mA
Reverse Input Voltage VR 6 V
Forward Current - Peak (1s pulse, 300pps) I LF(PK) 1 A
LED Power Dissipation @ TA
= 25°C
PD 140 mW
Derate above 25°C 1.33 mW/°C
DETECTOR
Collector-Emitter Voltage
VCEO 35 V
Emitter-Collector Voltage VECO 6 V
Continuous Collector Current LC 200 mA
Detector Power Dissipation @ TA
= 25°C
PD 200 mW
Derate above 25°C 2.0 mW/°C

H11B815 Features

• Compact 4-pin package
• Current Transfer Ratio: 600% minimum (at IF= 1 mA)
• High isolation voltage between input and output (5300 VRMS)
• UL recognized (File # E90700

H11B815 Typical Application

• Power Supply Monitors
• Relay Contact Monitor
• Telephone/Telegraph Line Receiver
• Twisted Pair Line Receiver
• Digital Logic/Digital Logic

H11B815 Connection Diagram

H11B815  Connection Diagram

H11B815 datasheet

H11B815
PDF/DataSheet Download

  • Datasheet: H11B815
  • File Size: 504352 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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H11B815 Relative Products

  • H11B3X

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  • H11B255

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  • H11B2

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    The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Optocoupler, Photodarlington Output, High Gain, with Base Connection

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