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MFG:FSC  D/C:08+  

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H11 Series Datasheet download

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Part Number: H11F1M

 

MFG: FSC

 

D/C: 08+

Description: The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical...


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H11F1M General Description


The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.

H11F1M Maximum Ratings

Symbol
Parameter
Device
Value
Units
TSTG
TOPR
TSOL
Storage Temperature
Operating Temperature
Lead Solder Temperature
All
All
All
-55 to +150
-40 to +100
260 for 10 sec


IF
VR
IF(pk)
Continuous Forward Current
Reverse Voltage
Forward Current-Peak(10s pulse,1%duty cycle)
All
All
All
60
5
l
mA
V
A
PD
LED Power Dissipation 25 Ambient
Derate Linearly from 25
All
100
mW
1.33
mW/
PD
Detector Power Dissipation @ 25
All
300
mW
Derate linearly from 25
4.0
mW/
BV4-6
Breakdown Voltage (either polarity)
H11F1M
H11F2M
±30
V
H11F3M
±15
V
I4-6
Continuous Detector Current (either polarity)
All
±100
A

H11F1M Features

`100 to 300M
`99.9% linearity
`15pF shunt capacitance
`100G I/O isolation resistance
`Extremely low offset voltage
`60 Vpk-pk signal capability
`No charge injection or latch-up
`ton, toff15s
`UL recognized (File #E90700)

H11F1M Typical Application

·Isolated variable attenuator
·Automatic gain control
·Active filter fine tuning/band switching
·Isolated sample and hold circuit
·Multiplexed, optically isolated A/D conversion

H11F1M Connection Diagram

H11F1M  Connection Diagram

H11F1M datasheet

H1102
PDF/DataSheet Download

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