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Part Number: H11F3

 

 

 

 

Description: The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical b...


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H11F3 General Description


The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector.

The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free
control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.

H11F3 Maximum Ratings

Parameters
Symbol
Device
Value
Units
TOTAL DEVICE
Storage Temperature
TSTG
All
-55 to +150
Operating Temperature
TOPR
All
-55 to +100
Lead Solder Temperature
TSOL
All
260 for 10 sec
EMITTER
Continuous Forward Current
IF
All
60
mA
Reverse Voltage
VR
All
5
V
Forward Current - Peak (10 s pulse, 1% duty cycle)
IF(pk)
All
1
A
LED Power Dissipation 25 Ambient
Derate Linearly From 25
PD
All
100
mW
1.33
mW/
DETECTOR
Detector Power Dissipation @ 25
Derate Linearly from 25
PD
All
300
mW
4.0
mW/
Breakdown Voltage (either polarity)
BV4-6
H11F1, H11F2
±30
V
H11F3
±15
V
Continuous Collector Current
I4-6
All
±100
mA

H11F3 Features

As a remote variable resistor
• 100 to 300 M
• 99.9% linearity
• 15 pF shunt capacitance
• 100 G I/O isolation resistance
As an analog switch
• Extremely low offset voltage
• 60 Vpk-pk signal capability
• No charge injection or latch-up
• ton, toff 15 S
• UL recognized (File #E90700)
• VDE recognized (File #E94766)
   Ordering option '300' (e.g. H11F1.300)

H11F3 Typical Application

As a variable resistor
• Isolated variable attenuator
• Automatic gain control
• Active filter fine tuning/band switching
As an analog switch
• Isolated sample and hold circuit
• Multiplexed, optically isolated A/D conversion

H11F3 datasheet

H11F3
PDF/DataSheet Download

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