H11G2

Current Transfer Ratio :
Maximum Collector Current :
Maximum Collector Emitter Voltage : 80 V
Minimum Operating Temperature : - 55 C
Maximum Forward Diode Voltage : 1.5 V
Maximum Operating Temperature : + 100 C
Packaging : Bulk
Input Type : DC
Isolation Voltage : 5300 Vrms
Maximum Collector Emitter Saturation Voltage : 1 V
Package / Case : PDIP-6
Maximum Power Dissipation : 260 mW


Features:

• High B_VCEO
- Minimum 100 V for H11G1
- Minimum 80 V for H11G2
- Minimum 55 V for H11G3
• High sensitivity to low input current
Minimum 500 percent CTR at I_F = 1 mA
• Low leakage current at elevated temperature (maximum 100 A at 80°C)
• Underwriters Laboratory (UL) recognized File# E90700




Application

• CMOS logic interface
• Telephone ring detector
• Low input TTL interface
• Power supply isolation
• Replace pulse transformer




Pinout






Specifications

Parameter	Symbol	Value	Units
TOTAL DEVICE Storage Temperature	TSTG	-55 to +150
Operating Temperature	TOPR	-55 to +100
Lead Solder Temperature	TSOL	260 for 10 sec
Total Device Power Dissipation @ TA = 25	PD	260	mW
Derate above 25		3.5	mW/
Input-Output Isolation Voltage	VISO	5300	Vac(rms)
EMITTER Forward Input Current	IF	60	mA
Reverse Input Voltage	VR	6.0	V
Forward Current - Peak (1s pulse, 300pps)	IF(pk)	3.0	A
LED Power Dissipation @ TA = 25	PD	100	mW
Derate above 25		1.8	mW/
DETECTOR Collector-Emitter Voltage H11G1	VCEO	100	V
H11G2		80
H11G3		55
Detector Power Dissipation @ TA = 25	PD	200	mW
Derate above 25		2.67	mW/

Description

The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.