H11G2M

TheH11G2M series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.

The H11G2M is designed as one kind of high voltage photodarlington optocoupler device that has a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor.

Features of the H11G2M are:(1)High BV CEO: Minimum 80V for H11G2M; (2)High sensitivity to low input current (Min. 500% CTR at I F = 1mA); (3)Low leakage current at elevated temperature (Max. 100A at 80°C); (4)Laboratory. And this device can be used in (1)CMOS logic interface; (2)Telephone ring detector; (3)Low input TTL interface; (4)Power supply isolation; (5)Replace pulse transformer applications.

The absolute maximum ratings of the H11G2M can be summarized as:(1)Storage Temperature: -55 to +150 °C;(2)Operating Temperature: -40 to +100 °C;(3)Lead Solder Temperature: 260 for 10 sec °C;(4)Total Device Power Dissipation @ 25°C: 3.5 mW;(5)Continuous Forward Current: 60 mA;(6)Reverse Voltage: 6 V;(7)Forward Current - Peak (1 s pulse, 300 pps): 3.0 A;(8)LED Power Dissipation 25°C Ambient: 100 mW;(9)Derate Linearly From 25°C: 100 mW/°C;(10)Detector Power Dissipation @ 25°C: 1.8 mW.etc. If you want to know more information about H11G2M, please download the datasheet in www.seekic.com or www.chinaicmart.com .