H2N3904

Specifications• Maximum TemperaturesStorage Temperature ........................................................................................ -55 ~ +150 °CJunction Temperature.................................................................................. +150 °C Maximum• Maximum ...

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SeekIC No. : 004357531 Detail

H2N3904: Specifications• Maximum TemperaturesStorage Temperature ........................................................................................ -55 ~ +150 °CJunction Temperature.................

floor Price/Ceiling Price

Part Number:
H2N3904
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Specifications

• Maximum Temperatures
Storage Temperature ........................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................. +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................. 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current........................................................................................................ 200 mA





Description

The H2N3904 is designed for general purpose switching and amplifier applications.

The H2N3904 is a type of pnp epitaxial planar transistor, which is designed for general purpose switching and ampl ifier applications.

The absolute maximum ratings and characteristics(Ta=25°C) of the H2N3904 can be summarized as:(1)maximum te mperatures:storage temperature is -55°C+150 °C,junction temperature is +150 °C maximum;(2)maximum power dissipation:total power dissipation (Ta=25°C)is 625 mW;(3)maximum voltages and currents (Ta=25°C):VCBO colle ctor to base voltage is 60 V,VCEO collector to emitter voltage is 40 V,VEBO emitter to base voltage is 6V,IC collector current is 200 mA.characteristics:(1):BVCBO is 60V min when IC is 10uA and IE is 0;(2)BVCEO is 40V min when IC is 1mA and IB is 0;(3)BVEBO is 6V min when IE is 10uA and IC is 0;(4):ICEX is 50 nA max when VCE is 30V and VBE is 3V;(5):VCE(sat)1 is 200 mV when IC is 10mA and IB is 1mA;(6):hFE5 is 30 min when VCE is 1V and IC is 100mA;(7): fT is 300 MHz min when VCE is 20V, IC is 10mA and f is 100MHz;(8):cob is 4 pF max when VCB is 5V, IE is 0 and f is 1MHz.etc.






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