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H2N5401

Features: • Complements to NPN Type H2N5551• High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))Specifications• Maximum TemperaturesStorage Temperature...................................................................................... -55 ~ +150 °CJunction Temperatu...

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SeekIC No. : 004357541 Detail

H2N5401: Features: • Complements to NPN Type H2N5551• High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))Specifications• Maximum TemperaturesStorage Temperature.....................

H2N5401 Data Sheet

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Part Number:
H2N5401
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• Complements to NPN Type H2N5551
• High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))


Specifications

• Maximum Temperatures
Storage Temperature...................................................................................... -55 ~ +150 °C
Junction Temperature................................................................................. +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... -160 V
VCEO Collector to Emitter Voltage................................................................................... -150 V
VEBO Emitter to Base Voltage ............................................................................................. -5 V
IC Collector Current....................................................................................................... -600 mA


Description

The H2N5401 is designed for general purpose applications requiring high breakdown voltages.


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