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H2N5551

Features: •Complements to PNP Type H2N5401•High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA))Specifications•Maximum TemperaturesStorage Temperature............................................................................................ -55 ~ +150Junction Temper...

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SeekIC No. : 004357542 Detail

H2N5551: Features: •Complements to PNP Type H2N5401•High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA))Specifications•Maximum TemperaturesStorage Temperature.....................

H2N5551 Data Sheet

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Part Number:
H2N5551
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

•Complements to PNP Type H2N5401
•High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA))


Specifications

•Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
Junction Temperature.................................................................................... +150 Maximum
•Maximum Power Dissipation
Total Power Dissipation (Ta=25)................................................................................ 625 mW
•Maximum Voltages and Currents (Ta=25)
VCBO Collector to Base Voltage....................................................................................... 180 V
VCEO Collector to Emitter Voltage.................................................................................... 160 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current ....................................................................................................... 600 mA


Description

The H2N5551 is designed for amplifier transistor.


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