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H2N6668

Specifications• Maximum TemperaturesStorage Temperature ....................................................................................... -55~+150°CJunction Temperature ............................................................................... +150°C Maximum• Maximum Power D...

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SeekIC No. : 004357549 Detail

H2N6668: Specifications• Maximum TemperaturesStorage Temperature ....................................................................................... -55~+150°CJunction Temperature ....................

H2N6668 Data Sheet

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Part Number:
H2N6668
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Specifications

• Maximum Temperatures
Storage Temperature ....................................................................................... -55~+150°C
Junction Temperature ............................................................................... +150°C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ................................................................................ 65 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... -80 V
BVCEO Collector to Emitter Voltage.................................................................................. -80 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current ........................................................................................................ -10 A




Description

The H2N6668 is designed for general-purpose amplifier and witching applications.


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