Purchase H45N03E, In-stock H45N03E From SeekIC.
- Table of contents:
H45N03E
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Suppliers
DataSheet
General Description
H45N03E Maximum Ratings
| Parameter | Symbol | Value | Units |
| Drain-Source Voltage | VDS | 25 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current | ID | 45 | A |
| Pulsed Drain Current *1 | IDM | 180 | A |
| Maximum Power Dissipation @ TC=25 | PD | 60 | W |
| Operating Junction and Storage Temperature Range | TJ,Tstg | -55 to 150 | |
| Avalanche Energy with Single Pulse ID=35A, VDD=20V, L=0.14mH |
EAS | 300 | mJ |
| Junction-to-Case Thermal Resistance | RJC | 2.1 | /W |
| Junction-to-Ambient Thermal Resistance(PCB mounted)*2 | RJA | 55 | /W |
*2: 1-in2 2oz Cu PCB board
H45N03E Features
• RDS(on)=15m@VGS=10V, ID=25A
• RDS(on)=20m@VGS=4.5V, ID=25A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Improved Shoot-Through FOM
• RDS(on)=20m@VGS=4.5V, ID=25A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Improved Shoot-Through FOM
- Datasheet:
- File Size: KB
- Manufacturer:
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- ·0001.2502.PT
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- ·0001.2502.TR
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