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H7N0203AB

Features: Low on-resistance RDS(on)=2.4 mΩtyp. Low drive current 4.5 V gate drive device can be driven from 5 V source Specifications Item Symbol Ratings Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS ±20 V Drain current ID 90 A Dr...

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H7N0203AB: Features: Low on-resistance RDS(on)=2.4 mΩtyp. Low drive current 4.5 V gate drive device can be driven from 5 V source Specifications Item Symbol Ratings Unit Drain to source vo...

H7N0203AB Data Sheet

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Part Number:
H7N0203AB
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Low on-resistance
RDS(on) =2.4 mΩ typ.
Low drive current
4.5 V gate drive device can be driven from 5 V source


Specifications

Item Symbol Ratings Unit
Drain to source voltage VDSS 20 V
Gate to source voltage VGSS ±20 V
Drain current ID 90 A
Drain peak current ID(pulse) Note 1 360 A
Body-drain diode reverse drain current IDR 90 A
Avalanche current IAP Note2 20 A
Avalanche energy EAR Note2 40 mJ
Channel dissipation Pch Note 3 100 W
Channel to Case Thermal Impedance ch-c 1.25 °C/W
Channel temperature Tch 150 °C
Storage temperature Tstg 55 to +150 °C



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