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H7N1002AB

Features: • Low on-resistance RDS(on) = 8 m typ.• Low drive current• Available for 4.5 V gate driveSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS ±20 V Drain current ID 75 A ...

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H7N1002AB: Features: • Low on-resistance RDS(on) = 8 m typ.• Low drive current• Available for 4.5 V gate driveSpecifications Item Symbol Ratings Unit Drain to source voltage ...

H7N1002AB Data Sheet

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Part Number:
H7N1002AB
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-resistance
   RDS(on) = 8 m typ.
• Low drive current
• Available for 4.5 V gate drive


Specifications

Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
75
A
Drain peak current
ID(pulse) Note1
300
A
Body-drain diode reverse drain current
IDR
75
A
Avalanche current
IAP Note 3
50
A
Avalanche energy
EAR Note3
166
mJ
Channel dissipation
Pch Note 2
100
W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150

Notes: 1. PW 10 s, duty cycle 1 %
            2. Value at Tc = 25
            3. Value at Tch = 25, Rg 50


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