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H7P0601DS

Features: ` Low on-resistance R DS(on) = 40 m typ.` Low drive current` 4.5 V gate drive device can driven from 5 V sourceSpecifications Item Symbol Rating Unit Drain to source voltage VDSS -60 V Gate to source voltage VGSS ±20 V Drain current ID -20...

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H7P0601DS: Features: ` Low on-resistance R DS(on) = 40 m typ.` Low drive current` 4.5 V gate drive device can driven from 5 V sourceSpecifications Item Symbol Rating Unit Drain to source vol...

H7P0601DS Data Sheet

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Part Number:
H7P0601DS
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

`  Low on-resistance
     R DS(on) = 40 m typ.
`  Low drive current
`  4.5 V gate drive device can driven from 5 V source


Specifications

Item
Symbol
Rating
Unit
Drain to source voltage
VDSS
-60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
-20
A
Drain peak current
ID(pulse)Note1

-80
A
Body-drain diode reverse drain current
IDR
-20
A
Avalanche current
IAPNote3
-12
A
Avalanche energy
EARNote3
12.3
mJ
Channel dissipation
PchNote2
25
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
Notes:1.PW 10s, duty cycle1%
           2.Value at Tc = 25 
           3.Value at Tch = 25, Rg  50


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