Features: ` Low on-resistance R DS(on) = 40 m typ.` Low drive current` 4.5 V gate drive device can driven from 5 V sourceSpecifications Item Symbol Rating Unit Drain to source voltage VDSS -60 V Gate to source voltage VGSS ±20 V Drain current ID -20...
H7P0601DS: Features: ` Low on-resistance R DS(on) = 40 m typ.` Low drive current` 4.5 V gate drive device can driven from 5 V sourceSpecifications Item Symbol Rating Unit Drain to source vol...
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|
Item |
Symbol |
Rating |
Unit |
| Drain to source voltage |
VDSS |
-60 |
V |
| Gate to source voltage |
VGSS |
±20 |
V |
| Drain current |
ID |
-20 |
A |
| Drain peak current |
ID(pulse)Note1 |
-80 |
A |
| Body-drain diode reverse drain current |
IDR |
-20 |
A |
| Avalanche current |
IAPNote3 |
-12 |
A |
| Avalanche energy |
EARNote3 |
12.3 |
mJ |
| Channel dissipation |
PchNote2 |
25 |
W |
| Channel temperature |
Tch |
150 |
|
| Storage temperature |
Tstg |
-55 to +150 |