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H9435S

Features: • RDS(on)=60mΩ@VGS=-10V, ID=-5.3A• RDS(on)=90mΩ@VGS=-4.5V, ID=-4.2A• Advanced Trench Process Technology• High Density Cell Design for Ultra Low On-Resistance• Fully Characterized Avalanche Voltage and Current• Improved Shoot-Through FOMPino...

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SeekIC No. : 004357970 Detail

H9435S: Features: • RDS(on)=60mΩ@VGS=-10V, ID=-5.3A• RDS(on)=90mΩ@VGS=-4.5V, ID=-4.2A• Advanced Trench Process Technology• High Density Cell Design for Ultra Low On-Resis...

H9435S Data Sheet

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Part Number:
H9435S
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• RDS(on)=60mΩ@VGS=-10V, ID=-5.3A
• RDS(on)=90mΩ@VGS=-4.5V, ID=-4.2A
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Fully Characterized Avalanche Voltage and Current
• Improved Shoot-Through FOM


Pinout

Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage ±20 V
ID Drain Current (Continuous) -5.3 A
IDM Gate Current -20 A
PD Total Power Dissipation @TA=25 2.5 W
Tj,Tstg Operating and Storage Temperature Range -55 to +150
RJA Thermal Resistance Junction to Case 30 /W
RJC Thermal Resistance Junction to Ambient (PCB mounted)*2 50 /W
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board


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