This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. H9926TS has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. H9926S has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. H9926CTS has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. H9926CS has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)