Features: • Low on-resistance• Capable of 2.5 V gate drive• Low drive current• High density mountingSpecifications Item Symbol Rating Unit Drain to source voltage VDSS -12 V Drain to source voltage VGSS ±10 V Drain current ID -4 A Drain peak cur...
HAT1032T: Features: • Low on-resistance• Capable of 2.5 V gate drive• Low drive current• High density mountingSpecifications Item Symbol Rating Unit Drain to source voltage ...
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| Item | Symbol | Rating | Unit |
| Drain to source voltage | VDSS | -12 | V |
| Drain to source voltage | VGSS | ±10 | V |
| Drain current | ID | -4 | A |
| Drain peak current | ID(pulse)*1 | -32 | A |
| Body-drain diode reverse drain current | IDR | -4 | A |
| Channel dissipation | Pch*2 | 1.3 | W |
| Channel temperature | Tch | 150 | |
| Storage temperature | Tstg | 55 to +150 |