HAT1048R

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Packaging: Tape & Reel (TR)
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25° C: 16A
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) @ Vgs: 105nC @ 10V
Supplier Device Package: 8-SOP
Manufacturer: Renesas Electronics America
Rds On (Max) @ Id, Vgs: 7 mOhm @ 8A, 10V
Input Capacitance (Ciss) @ Vds: 5700pF @ 10V


Features:

·  Capable of -4.5 V gate drive
·  Low drive current
·  High density mounting
·  Low on-resistance R_DS(on) = 6.0 mW typ (at V_GS = -10V)


Specifications

Item	Symbol	Ratings	Unit
Drain to source voltage Gate to source voltage  Drain current  Drain peak current  Body-drain diode reverse drain current   Channel dissipation   Channel to Ambient Thermal Impedance Channel temperature  Storage temperature	VDSS VGSS ID I D(pulse)Note1 I DR Pch Note2 ch-a Note2 Tch Tstg	30  ± 20  16  128  16  2.5   50 150    55 to + 150	V  V  A  A  A  W  °C/W  °C  °C

Note: 1. PW   10 ms, duty cycle  1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10s

 

Parameters:

Technical/Catalog Information	HAT1048R
Vendor	Renesas Technology America
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	7 mOhm @ 8A, 10V
Input Capacitance (Ciss) @ Vds	5700pF @ 10V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	105nC @ 10V
Package / Case	8-SOP
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	HAT1048R HAT1048R