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HAT1091C

Features: • Low on-resistance RDS(on) = 134 m typ. (at VGS = 4.5 V)• Low drive current.• 2.5 V gate drive devices.• High density mountingSpecifications Parameter Symbol Rating Unit Drain to source voltage VDSS -20 V Gate to source voltage VGSS ±12 V D...

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HAT1091C: Features: • Low on-resistance RDS(on) = 134 m typ. (at VGS = 4.5 V)• Low drive current.• 2.5 V gate drive devices.• High density mountingSpecifications Parameter Symbol...

HAT1091C Data Sheet

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Part Number:
HAT1091C
Supply Ability:
5000

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  • 15 Days
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Product Details

Description



Features:

• Low on-resistance RDS(on) = 134 m typ. (at VGS = 4.5 V)
• Low drive current.
• 2.5 V gate drive devices.
• High density mounting


Specifications

Parameter Symbol Rating Unit
Drain to source voltage VDSS -20 V
Gate to source voltage VGSS ±12 V
Drain current ID -1.5 A
Peak Drain Current ID(pulse)Note1 -6 A
Bodydrain diode reverse drain current IDR -1.5 A
Channel dissipation
PchNote2

830

 mW
Channel temperature Tch 150
Storage temperature Tstg -55 to +150
Notes 1. PW 10 s, duty cycle 1%
2. When using the glass epoxy board. (FR4 40 * 40 * 1.6mm), Ta = 25°C


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