HAT1108C

Features: • Low on-resistanceRDS(on) = 155 m typ. (at VGS = 10 V)• Low drive current.• 4.5 V gate drive devices.• High density mountingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS 20...

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SeekIC No. : 004358616 Detail

HAT1108C: Features: • Low on-resistanceRDS(on) = 155 m typ. (at VGS = 10 V)• Low drive current.• 4.5 V gate drive devices.• High density mountingSpecifications Item Symbol R...

floor Price/Ceiling Price

Part Number:
HAT1108C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Description



Features:

• Low on-resistance
RDS(on) = 155 m typ. (at VGS = 10 V)
• Low drive current.
• 4.5 V gate drive devices.
• High density mounting



Specifications

Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
20
V
Gate to source voltage
VGSS
20 / +10
V
Drain current
ID
1.5
A
Drain peak current
ID(pulse)Note 1
6
A
Body-Drain diode reverse Drain current
IDR
1.5
A
Channel dissipation
Pch Note 2
830
mW
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150



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