Features: • Low on-resistanceRDS(on) = 155 m typ. (at VGS = 10 V)• Low drive current.• 4.5 V gate drive devices.• High density mountingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS 20...
HAT1108C: Features: • Low on-resistanceRDS(on) = 155 m typ. (at VGS = 10 V)• Low drive current.• 4.5 V gate drive devices.• High density mountingSpecifications Item Symbol R...
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| Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
20 |
V |
| Gate to source voltage |
VGSS |
20 / +10 |
V |
| Drain current |
ID |
1.5 |
A |
| Drain peak current |
ID(pulse)Note 1 |
6 |
A |
| Body-Drain diode reverse Drain current |
IDR |
1.5 |
A |
| Channel dissipation |
Pch Note 2 |
830 |
mW |
| Channel temperature |
Tch |
150 |
|
| Storage temperature |
Tstg |
55 to +150 |