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HAT1139H

Features: • Capable of 4.5 V gate drive• Low drive current• High density mounting• Low on-resistance RDS(on) = 7.0 mΩ typ. (at VGS = 10 V)Specifications Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage ...

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HAT1139H: Features: • Capable of 4.5 V gate drive• Low drive current• High density mounting• Low on-resistance RDS(on) = 7.0 mΩ typ. (at VGS = 10 V)Specifications Item ...

HAT1139H Data Sheet

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Part Number:
HAT1139H
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
   RDS(on) = 7.0 mΩ typ. (at VGS = 10 V)


Specifications

Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
25 / +20
V
Drain current
ID
30
A
Drain peak current
ID(pulse) Note1
120
A
Body-drain diode reverse drain current
IDR
30
A
Channel dissipation
Pch Note2
15
W
Channel dissipation
Pch Note3
30
W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
           2. 1 Drive operation : Tc = 25
           3. 2 Drive operation : Tc = 25


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