Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40V
Gate Charge (Qg) @ Vgs: 95nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 45A
Vgs(th) (Max) @ Id: -
Power - Max: 30W
Manufacturer: Renesas Electronics America
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK
Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 22.5A, 10V
Input Capacitance (Ciss) @ Vds: 6200pF @ 10V
Features: • Capable of 7 V gate drive
• Low drive current
• High density mounting
• Low on-resistance RDS (on) = 3.8 m typ. (at VGS = 10 V)Specifications
|
Symbol |
Parameter |
Value |
Unit |
VDSS
VGSS
ID
ID (pulse)
IDR
IAP
EAR
Pch
Tch
Tstg |
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature |
40
±20
45
180
45
30
72
30
150
55 to +150 |
V
V
A
A
A
A
mJ
W
°C
°C |
Parameters: | Technical/Catalog Information | HAT2137H |
| Vendor | Renesas Technology America |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 45A |
| Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 22.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 6200pF @ 10V |
| Power - Max | 30W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 95nC @ 10V |
| Package / Case | LFPAK |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | HAT2137H
HAT2137H
|
HAT2137H Data Sheet
