HAT2160H-EL-E, US $ .76-.76, HAT2160H-EL-E DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003433371 Detail

HAT2160H-EL-E: MOSFET N-CH 20V 60A LFPAK

HAT2160H-EL-E Data Sheet

US $ .76~.76 / Piece | Get Latest Price

Part Number:: HAT2160H-EL-E
Mfg:
Supply Ability:: 5000

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$.76

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Upload time: 2025/12/17

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Recent History
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Features: · Low on-resistance· Capable of 4 V gate drive· Low drive current· High density mounting...

Product Details

Quick Details

Series:	-	Manufacturer:	Renesas Electronics America
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Current - Collector (Ic) (Max):	-	FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V	Continuous Drain Current :	15 A
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	60A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	2.6 mOhm @ 30A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	2.3V @ 1mA	Gate Charge (Qg) @ Vgs:	54nC @ 4.5V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	7750pF @ 10V
Power - Max:	30W	Mounting Type:	Surface Mount
Package / Case:	SC-100, SOT-669	Supplier Device Package:	LFPAK

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 60A
Power - Max: 30W
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Manufacturer: Renesas Electronics America
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK
Gate Charge (Qg) @ Vgs: 54nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds: 7750pF @ 10V

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HAT2160H-EL-E

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