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HAT2165N-EL-E

MOSFET N-CH 30V 55A LFPAKI

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SeekIC No. : 003433378 Detail

HAT2165N-EL-E: MOSFET N-CH 30V 55A LFPAKI

HAT2165N-EL-E Data Sheet

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Part Number:
HAT2165N-EL-E
Mfg:
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 55A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 27.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 33nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 5180pF @ 10V
Power - Max: 30W Mounting Type: Surface Mount
Package / Case: 8-PowerSOIC (0.156", 3.95mm) Supplier Device Package: 8-LFPAK-iV    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: -
Current - Continuous Drain (Id) @ 25° C: 55A
Power - Max: 30W
Manufacturer: Renesas Electronics America
Gate Charge (Qg) @ Vgs: 33nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 5180pF @ 10V
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 27.5A, 10V
Package / Case: 8-PowerSOIC (0.156", 3.95mm)
Supplier Device Package: 8-LFPAK-iV


Parameters:

Technical/Catalog InformationHAT2165N-EL-E
VendorRenesas Technology America
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C55A
Rds On (Max) @ Id, Vgs3.6 mOhm @ 27.5A, 10V
Input Capacitance (Ciss) @ Vds 5180pF @ 10V
Power - Max30W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs33nC @ 4.5V
Package / CaseLFPAK-i
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HAT2165N EL E
HAT2165NELE



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