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HAT2168N

Features: • High speed switching• Capable of 4.5 V gate drive• Low drive current• High density mounting• Low on-resistance RDS(on) = 6.3 m typ. (at VGS = 10 V)• Power Supply for Server and Telecom (Indoor use)Specifications Parameter Symbol Rating ...

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SeekIC No. : 004358691 Detail

HAT2168N: Features: • High speed switching• Capable of 4.5 V gate drive• Low drive current• High density mounting• Low on-resistance RDS(on) = 6.3 m typ. (at VGS = 10 V)• P...

HAT2168N Data Sheet

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Part Number:
HAT2168N
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance RDS(on) = 6.3 m typ. (at VGS = 10 V)
• Power Supply for Server and Telecom (Indoor use)


Specifications

Parameter Symbol Rating Unit
Drain to source voltage VDSS -30 V
Gate to source voltage VGSS ±20 V
Drain current ID 30 A
Drain peak current ID(pulse)
Note1		 120 A
Body-drain diode reverse drain current IDR 30 A
Avalanche current HAT1047R
HAT1047RJ		 IAP
Note3		 15 A
Avalanche energy HAT1047R
HAT1047RJ		 EAR
Note3		 22 mJ
Channel dissipation Pch Note2 15 W
Channel to case thermal resistance ch-C 8.33 /W
Channel temperature Tch 150
Storage temperature Tstg -55 to +150
Notes: 1. PW 10 s, duty cycle 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
3. Value at Tch = 25°C, Rg 50


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