HB52R1289E2U-A6B

The HB52R1289E2U-A6B belongs to HB52R1289E2U family which is a kind of 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. Therefore, the HB52R1289E2U makes high density mounting possible without surface mount technology. The HB52R1289E2U-A6B  provides common data inputs and outputs. Decoupling capacitors are mounted beside TCP on the module board. It is a 64M * 72 * 2-bank synchronous dynamic RAM module, mounted 36 pieces of 256-Mbit SDRAM (HM5225405BTB) sealed in TCP package, 1 piece of PLL clock driver, 3 pieces register driver and 1 piece of serial EEPROM (2-kbit) for Presence Detect (PD). An outline of the HB52R1289E2U is 168-pin socket type package (dual lead out).

The features of HB52R1289E2U-A6B can be summarized as (1)fully compatible with : JEDEC standard outline 8-byte DIMM : Intel PCB Reference design (Rev. 1.2); (2)168-pin socket type package (dual lead out) - outline: 133.35 mm (Length) * 30.48 mm (Height) * 4.80 mm (Thickness) -lead pitch: 1.27 mm; (3)3.3 V power supply; (4)clock frequency: 100 MHz (max); (5)LVTTL interface; (6)data bus width: * 72 ECC; (7)single pulsed RASulsed RAS; (8)4 banks can operates simultaneously and independently; (9)burst read/write operation and burst read/single write operation capability; (10)programmable burst length: 1/2/4/8; (11)2 variations of burst sequence -sequential -interleave; (12)programmable CE latency : 3/4 (HB52R1289E2U-A6B) : 4 (HB52R1289E2U-B6B); (13)byte control by DQMB; (14)refresh cycles: 8192 refresh cycles/64 ms; (15)2 variations of refresh -auto refresh -self refresh.

The absolute maximum ratings of HB52R1289E2U-A6B are (1)voltage on any pin relative to V SS VT: -0.5 to V CC + 0.5 ( 4.6 (max)) V; (2)supply voltage relative to V SS VCC: -0.5 to +4.6 V; (3)short circuit output current Iout: 50 mA; (4)power dissipation PT: 18 W; (5)operating temperature Topr: 0 to +55 °C; (6)storage temperature Tstg: -55 to +100 °C.