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HCC4011B

Specifications Symbol Parameter Value Unit VDD* Supply Voltage :HCC Types HCF Types 0.5 to + 20 0.5 to + 18 VV Vi Input Voltage 0.5 to VDD + 0.5 V II DC Input Current (any one input) ± 10 mA Ptot Total Power Dissipation (per package)Dissipation per Output T...

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SeekIC No. : 004359510 Detail

HCC4011B: Specifications Symbol Parameter Value Unit VDD* Supply Voltage :HCC Types HCF Types 0.5 to + 20 0.5 to + 18 VV Vi Input Voltage 0.5 to VDD + 0.5 V II DC Input Curren...

HCC4011B Data Sheet

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Part Number:
HCC4011B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Symbol Parameter Value Unit
VDD* Supply Voltage :HCC Types
   HCF Types		 0.5 to + 20
0.5 to + 18		 V
V
Vi Input Voltage 0.5 to VDD + 0.5 V
II DC Input Current (any one input) ± 10 mA
Ptot Total Power Dissipation (per package)
Dissipation per Output Transistor
for Top = Full Package-temperature Range		 200

100		 mW

mW
Top Operating Temperature : HCC Types
   HCF Types		 55 to + 125
40 to + 85		 °C
°C
Tstg Storage Temperature 65 to + 150 °C



Description

The HCC/HCF4011B, HCC/HCF4012B and HCC/HCF4023B (extended temperature range) and (intermediate temperature range) are monolithic, integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micropackage.

The HCC/HCF4011B, HCC/HCF4012B and HCC/HCF4023B NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of COS/MOS gates. All inputs and outputs are buffered.




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