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HCF4002B

Features: · PROPAGATION DELAY TIME : tPD = 50ns (TYP.) at VDD = 10V CL = 50pF· BUFFERED INPUTS AND OUTPUTS· STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS· QUIESCENT CURRENT SPECIFIED UP TO 20V· 5V, 10V AND 15V PARAMETRIC RATINGS· INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C· 100...

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SeekIC No. : 004359600 Detail

HCF4002B: Features: · PROPAGATION DELAY TIME : tPD = 50ns (TYP.) at VDD = 10V CL = 50pF· BUFFERED INPUTS AND OUTPUTS· STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS· QUIESCENT CURRENT SPECIFIED UP TO 20V· 5V...

HCF4002B Data Sheet

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Part Number:
HCF4002B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

· PROPAGATION DELAY TIME : tPD = 50ns (TYP.) at VDD = 10V CL = 50pF
· BUFFERED INPUTS AND OUTPUTS
· STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS
· QUIESCENT CURRENT SPECIFIED UP TO 20V
· 5V, 10V AND 15V PARAMETRIC RATINGS
· INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C
· 100% TESTED FOR QUIESCENT CURRENT
· MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
VDD
 Supply Voltage
-0.5 to +22
V
VI
 DC Input Voltage
-0.5 to VDD + 0.5
V
II
 DC Input Current
± 10
mA
PD
 Power Dissipation per Package
200
mW
Power Dissipation per Output Transistor
100
mW
TOP
 Operating Temperature
-55 to +125
Tstg
 Storage Temperature
-65 to +150



Description

The HCF4002B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4002B DUAL 4-INPUT NOR GATE provides the system designer with direct implementation of the NOR function and supplement the existing family of CMOS gates. All inputs and outputs are buffered.




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