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Part Number: HCF40109B
Description: HCF40109B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology availa...


Description: HCF40109B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology availa...
HCF40109B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. HCF40109B contains four low-to-high voltage level shifting circuits. Each circuit will shift a low-voltage digital-logic input signal (A, B, C, D) with logical 1 = VCC and logical 0 = VSS to a higher voltage output signal (E, F, G, H) with logical 1 = VDD and logical 0 = VSS. HCF40109B, unlike other low-to-high level-shifting circuits, does not require the presence of the high voltage supply (VDD) before the application of either the low-voltage supply (VCC) or the input signals. There are no restrictions on the sequence of application of VDD, VCC, or the input signals. In addition, there are no restrictions on the relative magnitudes of the supply voltages or input signals within the device maximum ratings; VCC may exceed VDD, and input signals may exceed VCC and VDD. When operated in the mode VCC VDD, HCF40109B will operate as a high-to-low level-shifter. HCF40109B also features individual three-state output capability. A low level on any of the separately enabled three-state output controls produces a high-impedance state in the corresponding output.
| Symbol | Parameter | Rating | Unit |
| VDD | Supply Voltage | -0.5 to +22 | V |
| VI | DC Input Voltage | -0.5 to +18 | V |
| II | DC Input Current | ± 10 | mV |
| PD | Power Dissipation per Package | 200 | mW |
| Power Dissipation per Output Transistor | 100 | ||
| Top | Operating Temperature | -55 to +125 | |
| Tstg | Storage Temperature | -65 to +150 |
HCF40109B
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