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Part Number: HCF40109B

 

 

 

 

Description: HCF40109B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology availa...


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HCF40109B General Description


HCF40109B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. HCF40109B contains four low-to-high voltage level shifting circuits. Each circuit will shift a low-voltage digital-logic input signal (A, B, C, D) with logical 1 = VCC and logical 0 = VSS to a higher voltage output signal (E, F, G, H) with logical 1 = VDD and logical 0 = VSS. HCF40109B, unlike other low-to-high level-shifting circuits, does not require the presence of the high voltage supply (VDD) before the application of either the low-voltage supply (VCC) or the input signals. There are no restrictions on the sequence of application of VDD, VCC, or the input signals. In addition, there are no restrictions on the relative magnitudes of the supply voltages or input signals within the device maximum ratings; VCC may exceed VDD, and input signals may exceed VCC and VDD. When operated in the mode VCC VDD, HCF40109B will operate as a high-to-low level-shifter. HCF40109B also features individual three-state output capability. A low level on any of the separately enabled three-state output controls produces a high-impedance state in the corresponding output.

HCF40109B Maximum Ratings

Symbol Parameter Rating Unit
VDD Supply Voltage -0.5 to +22 V
VI DC Input Voltage -0.5 to +18 V
II DC Input Current ± 10 mV
PD Power Dissipation per Package 200 mW
Power Dissipation per Output Transistor 100
Top Operating Temperature -55 to +125
Tstg Storage Temperature -65 to +150

HCF40109B Features

· INDIPENDENCE OF POWER SUPPLY SEQUENCE CONSIDERATIONS - VCC CAN EXCEED VDD, INPUT SIGNALS CAN EXCEED BOTH VCC AND VDD
· UP AND DOWN LEVEL SHIFTING CAPABILITY
· THREE-STATE OUTPUTS WITH SEPARATE ENABLE CONTROLS
· STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS
· QUIESCENT CURRENT SPECIFIED UP TO 20V
· 5V, 10V, AND 15V PARAMETRIC RATINGS
· INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C
· 100% TESTED FOR QUIESCENT CURRENT
· MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES"

HCF40109B Connection Diagram

HCF40109B  Connection Diagram

HCF40109B datasheet

HCF40109B
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  • Datasheet: HCF40109B
  • File Size: 300014 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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