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Part Number: HD74HC1G08

 

 

 

 

Description: The HD74HC1G08 is high speed CMOS two input AND gate using silicon gate CMOS process. With CMOS low po...


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HD74HC1G08 General Description


The HD74HC1G08 is high speed CMOS two input AND gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high-speed equivalent to LSTTL series. The internal circuit of three stages construction with buffer provides wide noise margin and stable output.

HD74HC1G08 Maximum Ratings

Item
Symbol
Ratings
Unit
Test Conditions
Supply voltage range
VCC
0.5 to 7.0
V
Input voltage range *1
VI
0.5 to VCC + 0.5
V
Output voltage range *1, 2
VO
0.5 to VCC + 0.5
V
Output : H or L
Input clamp current
IIK
±20
mA
VI < 0 or VI > VCC
Output clamp current
IOK
±20
mA
VO < 0 or VO >VCC
Continuous output current
IO
±25
mA
VO = 0 to VCC
Continuous current through
VCC or GND
ICC or IGND
±25
mA
Maximum power dissipation
at Ta = 25 (in still air) *3
PT
200
mW
Storage temperature
Tstg
65 to 150

Notes: The absolute maximum ratings are values, which must not individually be exceeded, and furthermore, no two of which may be realized at the same time.

1. The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
2. This value is limited to 5.5 V maximum.
3. The maximum package power dissipation was calculated using a junction temperature of 150.

HD74HC1G08 Features

• The basic gate function is lined up as Renesas uni logic series.
• Supplied on emboss taping for high-speed automatic mounting.
• Electrical characteristics equivalent to the HD74HC08 Supply voltage range : 2 to 6 V Operating temperature range : 40 to +85
• |IOH| = IOL = 2 mA (min)
• Ordering Information

HD74HC1G08 Connection Diagram

HD74HC1G08  Connection Diagram

HD74HC1G08 datasheet

HD74HC1G08CME
PDF/DataSheet Download

  • Datasheet: HD74HC1G08CME
  • File Size: 53766 KB
  • Manufacturer: RENESAS [Renesas Technology Corp]
  • Click here to Download

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