HD74HCT563

Features: ` LSTTL Output Logic Level Compatibility as well as CMOS Output Compatibility` High Speed Operation: tpd (D to Q, Q) = 13 ns typ (CL = 50 pF)` High Output Current: Fanout of 15 LSTTL Loads` Wide Operating Voltage: VCC = 4.5 to 5.5 V` Low Input Current: 1 A max` Low Quiescent Supply Curre...

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SeekIC No. : 004360670 Detail

HD74HCT563: Features: ` LSTTL Output Logic Level Compatibility as well as CMOS Output Compatibility` High Speed Operation: tpd (D to Q, Q) = 13 ns typ (CL = 50 pF)` High Output Current: Fanout of 15 LSTTL Loads...

floor Price/Ceiling Price

Part Number:
HD74HCT563
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/5/1

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Product Details

Description



Features:

`  LSTTL Output Logic Level Compatibility as well as CMOS Output Compatibility
`  High Speed Operation: tpd (D to Q, Q) = 13 ns typ (CL = 50 pF)
`  High Output Current: Fanout of 15 LSTTL Loads
`  Wide Operating Voltage: VCC = 4.5 to 5.5 V
`  Low Input Current: 1 A max
`  Low Quiescent Supply Current: ICC (static) = 4 A max (Ta = 25°C)




Specifications

Item
Symbol
Rating
Unit
Supply voltage range
VCC
0.5 to +7.0
V
Input voltage
VIN
0.5 to VCC + 0.5
V
Output voltage
VOUT
0.5 to VCC + 0.5
V
DC current drain per pin
IOUT
±35
mA
DC current drain per VCC, GND
ICC, IGND
±75
mA
DC input diode current
IIK
±20
mA
DC output diode current
IOK
±20
mA
Power dissipation per package
PT
500
mW
Storage temperature
Tstg
65 to +150
°C



Description

When the latch enable (LE) input is high, the Q outputs of HD74HCT563 will follow the inversion of the D inputs and the Q outputs of HD74HCT573 will follow the D inputs.

When the HD74HCT563 latch enable goes low, data at the D inputs will be retained at the outputs until latch enabled returns high again. When a high logic level is applied to the output control input, all outputs go to a high impedance state, regardless of what signals are present at the other inputs and the state of the storage elements.




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