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HDD16M64D8W

Features: • Part Identification HDD16M64D8W 10A : 100MHz (CL=2) HDD16M64D8W 13A : 133MHz (CL=2) HDD16M64D8W 13B : 133MHz (CL=2.5)• Power supply : VDD: 2.5V ± 0.2V, VDDQ: 2.5V ± 0.2V• Double-data-rate architecture; two data transfers per clock cycle• Bidirectional data st...

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SeekIC No. : 004360831 Detail

HDD16M64D8W: Features: • Part Identification HDD16M64D8W 10A : 100MHz (CL=2) HDD16M64D8W 13A : 133MHz (CL=2) HDD16M64D8W 13B : 133MHz (CL=2.5)• Power supply : VDD: 2.5V ± 0.2V, VDDQ: 2.5V ± 0.2V&#...

HDD16M64D8W Data Sheet

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Part Number:
HDD16M64D8W
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Part Identification
   HDD16M64D8W 10A : 100MHz (CL=2)
   HDD16M64D8W 13A : 133MHz (CL=2)
   HDD16M64D8W 13B : 133MHz (CL=2.5)
• Power supply : VDD: 2.5V ± 0.2V, VDDQ: 2.5V ± 0.2V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 2, 2.5 (clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height 1250 mil, double sided component


Specifications

PARAMETER SYMBOL RATING UNTE
Voltage on any pin relative to Vss VIN, VOUT -0.5 ~ 3.6 V
Voltage on VDD supply relative to Vss VDD -1.0 ~ 3.6 V
Voltage on VDDQ supply relative to Vss VDDQ -0.5 ~ 3.6 V
Storage temperature TSTG -55 ~ +150
Power dissipation PD 8.0 W
Short circuit current IOS 50 mA

Notes: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.


Description

The HANBiT HDD16M64D8W is 16M bit x 64 Double Data Rate SDRAM high density memory modules. The HANBiT
HDD16M64D8W consists of eight CMOS 16M x 8 bit with 4banks Double Data Rate SDRAMs in 66pin TSOP-II(400mil) packages mounted on a 184pin glass-epoxy substrate. Four 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each DDR SDRAM. The HDD16M64D8W is Dual In-line Memory Modules and intended for mounting into 184pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.




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