HE6SF 200

      HE6SF 200 is a kind of high efficiency super fast silicon rectifier diode. HE6SF 200 has two unique features: The first one is max.solder temperature which is 260. The second one is plastic material has UL classification 94V-0. There are some mechanical data about it. Plastic case us 8*7.5(mm)/p-600 style. Weight is approx.1.5g. Terminals is plated terminals soderable per MIL-STD-750. Standard packaging is 500 pieces per ammo.  Forward current is 6A. Reverse voltage is 200 V to 200 V . Repetitive peak reverse voltage (V_RRM) is 200 V . Surge peak reverse voltage (V_RSM) is 200 V. Max. reverse recovery time is 200 ns when IF is 0.5 A , IR is 1 A and IRR is 0.25 A.Max.forward voltage (VF@) is 0.95 V. There are some absolute maximum ratings about HE6SF 200 . IFAV is 6 A under the conidtion of Max. averaged fwd.current, R-load and 45TA. IFRM is 60 A under the condition of repetitive peak forward current and f is bigger than 15 Hz. IFSM is 300 A under the conidtion of peak forward surge current and 50 Hz half sinus-wave. i2t is 450 A2S under the conidtion of rating for fusing and t is less than 10 ms. RthA is 20 K/W under the conidtion of Max.thermal resistance junction to ambient. Operating junction temperature (Tj) is -50 to +175. Storage temperature(Ts) is -50 to +175. Maximum leakage current (T_h is 25, V_R is V_RRM)(I_R) is less than 5 A.
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