Purchase HE8812SG, In-stock HE8812SG From SeekIC.
Part Number: HE8812SG
Description: The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as th...
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HE8812SG
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DataSheet
General Description
HE8812SG General Description
The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.
HE8812SG Maximum Ratings
| Item | Symbol | Value | Unit |
| Forward current | IF | 250 | mA |
| Reverse voltage | VR | 3 | V |
| Operating temperature | Topr | 20 to +60 | °C |
| Storage temperature | Tstg | 40 to +90 | °C |
HE8812SG Features
• High efficiency and high output power
HE8812SG
PDF/DataSheet Download
- Datasheet: HE8812SG
- File Size: 143906 KB
- Manufacturer: HITACHI [Hitachi Semiconductor]
- Click here to Download
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