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HFA160NJ40D

Features: •Reduced RFI and EMI•Reduced Snubbing•Extensive Characterization of Recovery ParametersSpecifications Parameter Max Units VR Cathode-to-Anode Voltage 400 V IF @ TC = 25°C Continuous Forward Current 170 A IF @ TC = 100°C Continuous Forward Curren...

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SeekIC No. : 004361724 Detail

HFA160NJ40D: Features: •Reduced RFI and EMI•Reduced Snubbing•Extensive Characterization of Recovery ParametersSpecifications Parameter Max Units VR Cathode-to-Anode Voltage 400 V...

HFA160NJ40D Data Sheet

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Part Number:
HFA160NJ40D
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•Reduced RFI and EMI
•Reduced Snubbing
•Extensive Characterization of Recovery Parameters


Specifications

Parameter Max Units
VR Cathode-to-Anode Voltage 400 V
IF @ TC = 25°C Continuous Forward Current 170 A
IF @ TC = 100°C Continuous Forward Current 84
IFSM Single Pulse Forward Current 600
EAS Non-Repetitive Avalanche Energy 1.4 µJ
PD @ TC = 25°C Maximum Power Dissipation 310 W
PD @ TC = 100°C Maximum Power Dissipation 125
TJ
TSTG
 Operating Junction and
Storage Temperature Range		 -55 to +150 C



Description

HFA160NJ40D HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These HFA160NJ40D devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.




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