Manufacturer: Vishay Semiconductors
Diode Type: Standard
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Series: HEXFRED®
Voltage - DC Reverse (Vr) (Max): 600V
Current - Reverse Leakage @ Vr: 10µA @ 600V
Mounting Type: Through Hole, Radial
Packaging: Bulk
Reverse Recovery Time (trr): 100ns
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 30A
Current - Average Rectified (Io) (per Diode): 50A (DC)
Package / Case: TO-249AA (Modified), D-60
Supplier Device Package: D-60
Features: · Reduced RFI and EMI
· Reduced Snubbing
· Extensive Characterization of Recovery ParametersSpecifications
| |
Parameter |
Max. |
Units |
| VR |
Cathode-to-Anode Voltage |
600 |
V |
| IF @ TC = 25 |
Continuous Forward Current |
50 |
A |
| IF @ TC = 70 |
Continuous Forward Current |
24 |
| IFSM |
Single Pulse Forward Current |
200 |
| PD @TC = 25 |
Maximum Power Dissipation |
125 |
W |
| PD @TC = 70 |
Maximum Power Dissipation |
50 |
| EAS |
Non-Repetitive Avalanche Energy |
220 |
mJ |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 150 |
|
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
|
DescriptionHEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
HFA60MB60C Data Sheet
