HGT1S20N60A4S9A

IGBT Transistors 600V SMPS SERIES NCH IGBT

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SeekIC No. : 00143785 Detail

HGT1S20N60A4S9A: IGBT Transistors 600V SMPS SERIES NCH IGBT

floor Price/Ceiling Price

Part Number:
HGT1S20N60A4S9A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/2

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.8 V Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : +/- 250 nA Power Dissipation : 290 W
Maximum Operating Temperature : + 150 C Package / Case : TO-263AB-3
Packaging : Reel    

Description

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.8 V
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-263AB-3
Power Dissipation : 290 W


Features:

•>100kHz Operation at 390V, 20A
•200kHz Operation at 390V, 12A
•600V Switching SOA Capability
•Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125
•Low Conduction Loss
•Temperature Compensating SABER™ Model www.intersil.com
•Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards



Specifications

                                                                                                                    HGT1S20N60A4S9A                         UNITS
Collector to Emitter Voltage  . . . . . . . . . . . . .                         BVCES                       600                                          V
Collector Current Continuous
At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . .                        IC25                       70                                             A
At TC = 110 . . . . . . . . . . . . . . . . . . .   . . . . .                         IC110                       40                                              A
Collector Current Pulsed (Note 1) . .  . . . . . . . . .                        ICM                       280                                            A
Gate to Emitter Voltage Continuous.                                         VGES                       ±20                                           V
Gate to Emitter Voltage Pulsed . . .   . . . . . . .                           VGEM                       ±30                                           V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . SSOA
100A at 600V
Power Dissipation Total at TC = 25 . . . . . . . .    . . . . . . . . . . . . PD                        290                                           W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . .                              2.32                                         W/
Operating and Storage Junction Temperature Range . . . . . TJ, TSTG               -55 to 150                                         
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . TL                       300                                            
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . TPKG                       260                                            
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.




Description

The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150.

This  HGT1S20N60A4S9A  IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.Formerly Developmental Type TA49339.




Parameters:

Technical/Catalog InformationHGT1S20N60A4S9A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)70A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 20A
Power - Max290W
Mounting TypeSurface Mount
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HGT1S20N60A4S9A
HGT1S20N60A4S9A



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