MFG:TO-263(D2PAK) Package Cooled:7850 D/C:FAIRCHILD
MFG: TO-263(D2PAK)
Package Cooled: 7850
D/C: FAIRCHILD
Description: The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs...
The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49339.
HGT1S20N60A4S9A UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . BVCES 600 V
Collector Current Continuous
At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 70 A
At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . IC110 40 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . ICM 280 A
Gate to Emitter Voltage Continuous. VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . SSOA
100A at 600V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . PD 290 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . 2.32 W/
Operating and Storage Junction Temperature Range . . . . . TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . TL 300
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . TPKG 260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
HGT1N30N60A4D
PDF/DataSheet Download
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