MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Descriptions: IGBT UFS N-CHAN 600V 45A TO-247
800
1.76280
1410.24
| Technical/Catalog Information | HGT1S20N60C3S9A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 45A |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 20A |
| Power - Max | 164W |
| Mounting Type | Through Hole |
| Package / Case | TO-247 |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HGT1S20N60C3S9A HGT1S20N60C3S9A |
HGT1N30N60A4D
PDF/DataSheet Download
This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGT1S20N60C3S have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower...
This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These HGT1S20N60C3RS demonstrate RUGGED performance capability when subjected to harsh SHORT CIR...
This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These HGT1S20N60C3R demonstrate RUGGED performance capability when subjected to harsh SHORT CIRC...
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The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much low...
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