Package Cooled:7850 D/C:Intersil
Package Cooled: 7850
D/C: Intersil
Description: The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of ...
The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT used is the development type TA49312. The Diode used is the development type TA49056. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
| Collector to Emitter Voltage ................ . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . ........................... IC110 Collector Current Pulsed (Note 1) . . . . . ........ICM Gate to Emitter Voltage Continuous. . . . . . . .. VGES Gate to Emitter Voltage Pulsed . . ............... VGEM Switching Safe Operating Area at TJ = 150oC (Figur.SSOA Power Dissipation Total at TC = 25oC . ......... . . PD Power Dissipation Derating TC > . . . . . . .. . . 25oC Operating and Storage Junction Temperature RangeTJ,TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s . . . . . TL Package Body for 10s, see Techbrief 334 . . . . . .Tpkg Short Circuit Withstand Time (Note 2) at VGE = 15V. tSC Short Circuit Withstand Time (Note 2) at VGE = 12V. tSC |
1200 12 5.6 20 ±20 ±30 12A at 1200V 104 0.83 -55 to 150 300 260 8 15 |
V A A A V V W W/o C o C o C o C µs µs |
HGT1S2N120BNDS
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IGBT UFS N-CHAN 600V 45A TO-247
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